vs-30tps..pbf series, vs-30tps..-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 1 document number: 94386 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor high voltage, phase control scr, 30 a features ? designed and qualified according to jedec ? -jesd47 ? 125 c max. operating junction temperature ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor contro l, ups, welding and battery charge description the vs-30tps... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary package to-247ac diode variation single scr i t(av) 20 a v drm /v rrm 800 v, 1200 v v tm 1.3 v i gt 45 ma t j -40 c to 125 c ( g ) 3 2 (a) 1 (k) to-247ac 1 2 3 available major ratings and characteristics parameter test conditions values units i t(av) sinusoidal wa v eform 20 a i rms 30 v rrm /v drm 800/1200 v i tsm 300 a v t 20 a, t j = 25 c 1.3 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm /v drm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma vs-30tps08p b f, vs-30tps08-m3 800 900 10 vs-30tps12p b f, vs-30tps12-m3 1200 1300
vs-30tps..pbf series, vs-30tps..-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 2 document number: 94386 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum a v erage on-state current i t(av) t c = 95 c, 180 conduction half sine wave 20 a maximum rms on-state current i rms 30 maximum peak, one-cycle ? non-repetiti v e surge current i tsm 10 ms sine pulse, rated v rrm applied 250 10 ms sine pulse, no v oltage reapplied 300 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 310 a 2 s 10 ms sine pulse, no v oltage reapplied 442 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no v oltage reapplied 4420 a 2 ? s maximum on-state v oltage drop v tm 20 a, t j = 25 c 1.3 v on-state slope resistance r t t j = 125 c 12 m ? threshold v oltage v t(to) 1.0 v maximum re v erse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 maximum holding current i h anode supply = 6 v, resistive load, initial i t = 1 a, t j = 25 c 150 maximum latching current i l anode supply = 6 v, resisti v e load , t j = 25 c 200 maximum rate of rise of off-state v oltage dv/dt t j = t j maximum, linear to 80 % v drm , r g -k = open 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum a v erage gate power p g(av) 2.0 maximum peak positi v e gate current + i gm 1.5 a maximum peak negati v e gate v oltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 60 ma anode supply = 6 v, resistive load, t j = 25 c 45 anode supply = 6 v, resistive load, t j = 125 c 20 maximum required dc gate ? v oltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 2.5 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate v oltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical re v erse reco v ery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-30tps..pbf series, vs-30tps..-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 3 document number: 94386 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics f ig. 2 - current rating characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation 0.8 c/w maximum thermal resistance, ? junction to am b ient r thja 40 maximum thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (l b f in) maximum 12 (10) marking de v ice case style to-247ac (jedec) 30tps08 30tps12 90 100 110 120 130 0 5 10 15 20 25 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average on-state current (a) 3 0 tp s. . se r i e s r (dc) = 0.8 c/ w thjc 80 90 100 110 120 130 0 5 10 15 20 25 30 35 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) cond uc tion period 3 0 tps. . se r i e s r (dc) = 0.8 c/ w thjc
vs-30tps..pbf series, vs-30tps..-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 4 document number: 94386 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetiti v e surge current fig. 6 - maximum non-repetiti v e surge current fig. 7 - on-state volt age drop characteristics 0 10 20 30 40 50 60 0 5 10 15 20 25 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 30tps.. se rie s t = 125c j 0 20 40 60 80 0 1020304050 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 3 0 tp s. . se r i e s t = 125c j 120 140 160 180 200 220 240 260 280 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. rrm peak half sine wave on-state current (a) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 3 0 tp s. . se r i e s 120 140 160 180 200 220 240 260 280 300 0.01 0.1 1 peak ha lf sine wa ve on-st a te current (a) pulse train duration (s) versus pulse train duration. control of conduc tion may not be ma intained. initia l t = 125c no voltage reapplied ra t e d v re a p p l i e d rrm j 30tps.. se rie s maximum non repetitive surge current 1 10 100 1000 01234567 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 30tps.. se rie s
vs-30tps..pbf series, vs-30tps..-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 5 document number: 94386 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - thermal impedance z thjc characteristics fig. 9 - gate characteristics 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) st e a d y st a t e v a l u e (dc operation) si n g l e p u l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 30tps.. series transient thermal impedance z (c/ w) thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) tj = 2 5 c tj = 1 2 5 c frequency limited by pg(av) tj = - 1 0 c igd vgd 30tps.. serie s tr = 1 s, t p >= 6 s <= 30% rated di/dt: 10 v, 65 ohms b)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s a)recommended load line for re c t a n g u l a r g a t e p u l se (1) pgm = 40 w, tp = 1 ms (2) pgm = 20 w, tp = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, t p = 10 ms
vs-30tps..pbf series, vs-30tps..-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 6 document number: 94386 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-30tps08pbf 25 500 antist atic plastic tubes vs-30tps08-m3 25 500 antist atic plastic tubes VS-30TPS12PBF 25 500 antist atic plastic tubes vs-30tps12-m3 25 500 antist atic plastic tubes links to related documents dimensions www.vishay.com/doc?95542 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -m3 www.vishay.com/doc?95007 2 - current rating (30 = 30 a) 3 - circuit configuration: 4 - package: 5 t = thyristor - type of silicon: 6 - voltage code x 100 = v rrm p = to-247 s = standard recovery rectifier 7 08 = 800 v 12 = 1200 v device code 6 2 4 3 5 7 30 t p s 12 pbf v s - - environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free 1 1 - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 07-apr-15 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 6.98 - 0.275 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) p (datum b) p1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating
outline dimensions www.vishay.com vishay semiconductors revision: 21-apr-15 1 document number: 95542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 - 50 mils l/f dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c and q symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.35 0.020 0.053 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.17 1.37 0.046 0.054 e1 13.46 - 0.53 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 7.39 - 0.291 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) p (datum b) p1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating
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